Searched refs:eraseblock (Results 1 – 11 of 11) sorted by relevance
| /linux/include/linux/mtd/ |
| A D | nand.h | 81 unsigned int eraseblock; member
712 pos->plane = pos->eraseblock % nand->memorg.planes_per_lun; in nanddev_offs_to_pos()
737 if (a->eraseblock != b->eraseblock) in nanddev_pos_cmp()
738 return a->eraseblock < b->eraseblock ? -1 : 1; in nanddev_pos_cmp()
763 ((pos->eraseblock + in nanddev_pos_to_offs()
803 pos->eraseblock = 0; in nanddev_pos_next_target()
825 pos->eraseblock = 0; in nanddev_pos_next_lun()
839 if (pos->eraseblock >= nand->memorg.eraseblocks_per_lun - 1) in nanddev_pos_next_eraseblock()
842 pos->eraseblock++; in nanddev_pos_next_eraseblock()
844 pos->plane = pos->eraseblock % nand->memorg.planes_per_lun; in nanddev_pos_next_eraseblock()
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| A D | rawnand.h | 1520 int nand_erase_op(struct nand_chip *chip, unsigned int eraseblock);
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| /linux/Documentation/devicetree/bindings/mtd/partitions/ |
| A D | redboot-fis.yaml | 11 It uses one single flash eraseblock in the flash to store an index of
25 description: a index to the eraseblock containing the FIS directory on this
27 eraseblock at 0x00000000, 1 means the second eraseblock at 0x00008000 and so on.
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| /linux/Documentation/ABI/stable/ |
| A D | sysfs-class-ubi | 38 Amount of available logical eraseblock. For example, one may
70 Maximum logical eraseblock size this UBI device may provide. UBI
71 volumes may have smaller logical eraseblock size because of their
79 Maximum physical eraseblock erase counter value.
148 Volume alignment - the value the logical eraseblock size of
150 logical eraseblock size is multiple of 2048. In other words,
151 volume logical eraseblock size is UBI device logical eraseblock
191 Count of physical eraseblock reserved for this volume.
219 Logical eraseblock size of this volume. Equivalent to logical
220 eraseblock size of the device aligned on the volume alignment
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| /linux/drivers/mtd/tests/ |
| A D | nandbiterrs.c | 60 static unsigned eraseblock; /* Eraseblock number for our page. */ variable
359 eraseblock = mtd_div_by_eb(offset, mtd); in mtd_nandbiterrs_init()
362 page_offset, offset, eraseblock); in mtd_nandbiterrs_init()
376 err = mtdtest_erase_eraseblock(mtd, eraseblock); in mtd_nandbiterrs_init()
389 err = mtdtest_erase_eraseblock(mtd, eraseblock); in mtd_nandbiterrs_init()
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| /linux/drivers/mtd/ubi/ |
| A D | Kconfig | 22 wear leveling by means of moving data from eraseblock with low erase
26 other flashes which have eraseblock life-cycle 100000 or more.
27 However, in case of MLC NAND flashes which typically have eraseblock
32 int "Maximum expected bad eraseblock count per 1024 eraseblocks"
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| /linux/Documentation/filesystems/ |
| A D | ubifs.rst | 25 eraseblock, write to some offset within an eraseblock, and erase a whole
26 eraseblock. Block devices support 2 main operations - read a whole
28 3 The whole eraseblock has to be erased before it becomes possible to
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| A D | ubifs-authentication.rst | 233 eraseblock to another and does not atomically erase the first eraseblock.
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| /linux/Documentation/ABI/testing/ |
| A D | sysfs-class-mtd | 51 zero, this is the eraseblock size for the entire device.
53 can be used to determine the actual eraseblock layout.
81 For devices that have variable eraseblock sizes, this
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| /linux/fs/jffs2/ |
| A D | README.Locking | 74 This is used to serialise access to the eraseblock lists, to the
75 per-eraseblock lists of physical jffs2_raw_node_ref structures, and
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| /linux/drivers/mtd/nand/raw/ |
| A D | nand_base.c | 1825 int nand_erase_op(struct nand_chip *chip, unsigned int eraseblock) in nand_erase_op() argument
1827 unsigned int page = eraseblock << in nand_erase_op()
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